As a result of studying the module the student should have the following competencies:
- ability to analyze the principle of action, properties, basic characteristics and parameters of semiconductor devices based on structures of metal-oxide-semiconductor and elements of integrated circuits;
- ability to perform mathematical analysis of semiconductor devices in micro- and nanoelectronics;
- the ability to analyze changes in the parameters and properties of devices based on structures of metal-oxide-semiconductor and IC elements depending on the modes of operation.
- the ability to design micro- and nanosystem devices using attachments based on MOS structures

- Prerequisites: Models and phenomena of transference
- co-requisites: -

uantum-size effects in solid-state devices. Variations of transistor structures of integrated circuits. Features of MOS transistors with small geometric dimensions. Resonant tunneling field effect transistors. Electronic devices on nanostructures.

Druzhinin A.O. Solid State Electronics: Physical Basics and Properties of Semiconductor Devices: A Tutorial ..- Lviv: published .; OU LP, 2009 ..- 332 p. (in Ukrainian)
• Druzhinin A.O., Ostrovsky I.P., Hoverko Y.M., Nichkalo S.I. Instruments based on MOS structures in micro- and nanoelectronics: lecture notes for masters and specialists of specialty 7.05080101 (8.05080101) “Micro- and nanoelectronic devices and devices”. - Lviv: Publishing House of Lviv Polytechnic, 2013. - 68 p. (in Ukrainian)
• Hoverko Yu.M. Technology of Elements of Integrated Circuits of Micro- and Nanosystem Techniques: a Tutorial / Yu.M. Hoverko, I.P. Ostrovsky, A.O. Druzhinin - Lviv: Publishing House of the Lviv Polytechnic, 2018. - 172 p. (in Ukrainian)

• Current control (30%): written reports on laboratory work, oral examination
• Final control (70%, exam): testing (30%).