As a result of studying the module the student should know:
- principle of action, properties, basic characteristics and parameters of semiconductor devices on the basis of metal-oxide-semiconductor structures and elements of integrated circuits;
- Ways of development and modern problems in micro- and nanoelectronics.
The trained specialist should be able to:
- to carry out mathematical analysis of semiconductor devices in micro and nanoelectronics;
- to analyze the changes of parameters and properties of devices on the basis of structures of metal-oxide-semiconductor and IC elements depending on the modes of operation.

- Prerequisite: Solid-state electronics
- co-requisites: -

Quantum-size effects in solid-state devices. Variations of transistor structures of integrated circuits. Features of MOS transistors with small geometric dimensions. Resonant tunneling field effect transistors. Electronic devices on nanostructures.

• Druzhinin A.O. Solid State Electronics: Physical Basics and Properties of Semiconductor Devices: A Tutorial ..- Lviv: published .; OU LP, 2009 ..- 332 p. (in Ukrainian)
• Martin-Palm R.J., Agullo-Rueda F. Nanotechnology for Micro- and Optoelectronics. -M .: Technosphere, 2007.-368 p. (in Russian)
• Gerasimenko NN, Parkhomenko Yu.N. Silicon is a material of nanoelectronics .- M .: Technosphere, 2007.-352 p. (in Russian)

• Current control (30%): written reports on laboratory work, oral examination
• Final control (70%, exam): testing (30%).